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1

The III-Nitride Double Heterostructure Revisited: Benefits for Threshold Voltage Engineering of MIS Devices

Hahn, Herwig, Funck, Carsten, Geipel, Sascha, Kalisch, Holger, Vescan, Andrei

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 2.71 MB

english, 2016

2

Self-Aligned Process for Selectively Etched p-GaN-Gated AlGaN/GaN-on-Si HFETs

Lukens, Gerrit, Hahn, Herwig, Kalisch, Holger, Vescan, Andrei

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 2.06 MB

english, 2018

3

AlGaN/AlN-GaN-SL HEMTs with Multiple 2DEG Channels

Wille, Ada, Yacoub, Hady, Debald, Arne, Kalisch, Holger, Vescan, Andrei

Journal:

Journal of Electronic Materials

Year:

2015

Language:

english

File:

PDF, 947 KB

english, 2015

4

Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V

Hahn, Herwig, Benkhelifa, Fouad, Ambacher, Oliver, Brunner, Frank, Noculak, Achim, Kalisch, Holger, Vescan, Andrei

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.09 MB

english, 2015

5

AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon (1 1 1) substrates

J.D Brown, Ric Borges, Edwin Piner, Andrei Vescan, Sameer Singhal, Robert Therrien

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 217 KB

english, 2002

6

Morphology Control of Organic-Inorganic Bismuth-Based Perovskites for Solar Cell Application

Sanders, Simon, Stümmler, Dominik, Pfeiffer, Pascal, Ackermann, Nils, Schimkat, Florian, Simkus, Gintautas, Heuken, Michael, Baumann, Peter K., Vescan, Andrei, Kalisch, Holger

Journal:

physica status solidi (a)

Year:

2018

Language:

english

File:

PDF, 1.31 MB

english, 2018

7

Measurement of stress in a synthetic diamond substrate using the photoelastic method

Liang, Hancheng, Vescan, Andrei, Kohn, Erhard, Chin, Ken K.

Journal:

Diamond and Related Materials

Year:

1996

Language:

english

File:

PDF, 451 KB

english, 1996

8

p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers

Hahn, Herwig, Reuters, Benjamin, Pooth, Alexander, Hollander, Bernd, Heuken, Michael, Kalisch, Holger, Vescan, Andrei

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 2.90 MB

english, 2013

9

Demonstration of a GaN-Based Vertical-Channel JFET Fabricated by Selective-Area Regrowth

Kotzea, Simon, Debald, Arne, Heuken, Michael, Kalisch, Holger, Vescan, Andrei

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 2.89 MB

english, 2018

10

Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT

Lecourt, Francois, Agboton, Alain, Ketteniss, Nico, Behmenburg, Hannes, Defrance, Nicolas, Hoel, Virginie, Kalisch, Holger, Vescan, Andrei, Heuken, Michael, De Jaeger, Jean-Claude

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 321 KB

english, 2013

11

Recessed-Gate Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistors on Si with Record DC Performance

Hahn, Herwig, Lükens, Gerrit, Ketteniss, Nico, Kalisch, Holger, Vescan, Andrei

Journal:

Applied Physics Express

Year:

2011

Language:

english

File:

PDF, 620 KB

english, 2011

12

Characterization of GaN-based p-channel device structures at elevated temperatures

Hahn, Herwig, Reuters, Benjamin, Pooth, Alexander, Kalisch, Holger, Vescan, Andrei

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 54 KB

english, 2014

13

Development of a III-nitride electro-optical modulator for UV–vis

Wieben, Jens, Beckmann, Carsten, Yacoub, Hady, Vescan, Andrei, Kalisch, Holger

Journal:

Japanese Journal of Applied Physics

Year:

2019

Language:

english

File:

PDF, 3.46 MB

english, 2019

14

[IEEE 2012 70th Annual Device Research Conference (DRC) - University Park, PA, USA (2012.06.18-2012.06.20)] 70th Device Research Conference - Quaternary nitride enhancement mode HFET with 260 mS/mm and a threshold voltage of +0.5 V

Ketteniss, Nico, Reuters, Benjamin, Hollander, Bernhard, Hahn, Herwig, Kalisch, Holger, Vescan, Andrei

Year:

2012

Language:

english

File:

PDF, 791 KB

english, 2012

15

Optimization of Transparent Organic Light-Emitting Diodes by Simulation-Based Design of Organic Capping Layers

Pfeiffer, Pascal, Stümmler, Dominik, Sanders, Simon, Beckmann, Carsten, Simkus, Gintautas, Heuken, Michael, Vescan, Andrei, Kalisch, Holger

Journal:

Journal of Nanoscience and Nanotechnology

Year:

2019

Language:

english

File:

PDF, 574 KB

english, 2019

16

Study on growth and electrical performance of double-heterostructure AlGaN/GaN/AlGaN field-effect-transistors

Andrei Vescan, Hilde Hardtdegen, Nico Ketteniß, Martin Eickelkamp, Achim Noculak, Jens Goliasch, Martina v. d. Ahe, Helge Lago Bay, Thomas Schäpers, Holger Kalisch, Detlev Grützmacher, Rolf H. Jansen

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 307 KB

english, 2009

17

Comparison of MOCVD and MBE Regrowth for CAVET Fabrication

Kotzea, Simon, Witte, Wiebke, Godejohann, Birte-Julia, Marx, Mathias, Heuken, Michael, Kalisch, Holger, Aidam, Rolf, Vescan, Andrei

Journal:

Year:

2019

Language:

english

File:

PDF, 2.44 MB

english, 2019

18

Investigations of the electrochemical stability of InGaN photoanodes in different electrolytes

Finken, Matthias, Wille, Ada, Reuters, Benjamin, Heuken, Michael, Kalisch, Holger, Vescan, Andrei

Journal:

physica status solidi (b)

Year:

2015

Language:

english

File:

PDF, 578 KB

english, 2015

19

Investigation of Perovskite Solar Cells Employing Chemical Vapor Deposited Methylammonium Bismuth Iodide Layers

Stümmler, Dominik, Sanders, Simon, Pfeiffer, Pascal, Wickel, Noah, Simkus, Gintautas, Heuken, Michael, Baumann, Peter K., Vescan, Andrei, Kalisch, Holger

Journal:

Year:

2018

Language:

english

File:

PDF, 1.28 MB

english, 2018

20

Formation of a Monocrystalline, $M$-Plane AlN Layer by the Nitridation of $\gamma$-LiAlO$_{2}$(100)

Wang, Kwang-Ru, Mauder, Christof, Wan, Qian, Jenichen, Bernd, Woitok, Joachim F., Grahn, Holger T., Kalisch, Holger, Heuken, Michael, Vescan, Andrei, Trampert, Achim

Journal:

Applied Physics Express

Year:

2012

Language:

english

File:

PDF, 1.84 MB

english, 2012

21

In-situ decomposition and etching of AlN and GaN in the presence of HCl

Fahle, Dirk, Kruecken, Thomas, Dauelsberg, Martin, Kalisch, Holger, Heuken, Michael, Vescan, Andrei

Journal:

Journal of Crystal Growth

Year:

2014

Language:

english

File:

PDF, 2.46 MB

english, 2014

22

The controlled growth of GaN microrods on Si(111) substrates by MOCVD

Foltynski, Bartosz, Garro, Nuria, Vallo, Martin, Finken, Matthias, Giesen, Christoph, Kalisch, Holger, Vescan, Andrei, Cantarero, Andrés, Heuken, Michael

Journal:

Journal of Crystal Growth

Year:

2015

Language:

english

File:

PDF, 1.01 MB

english, 2015

23

Pentacene/K12 solar cells formed by organic vapor phase deposition

Axmann, Sebastian, Brast, Michael, Pandey, Ajay Kumar, Burn, Paul, Meredith, Paul, Heuken, Michael, Vescan, Andrei, Kalisch, Holger

Journal:

Journal of Photonics for Energy

Year:

2014

Language:

english

File:

PDF, 496 KB

english, 2014

24

Investigation of plasma-oxidized aluminium as a gate dielectric for AlGaN/GaN MISHFETs

Hahn, Herwig, Alam, Assadullah, Heuken, Michael, Kalisch, Holger, Vescan, Andrei

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 427 KB

english, 2012

25

High-Intensity CsPbBr 3 Perovskite LED using Poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine) as Hole Transport and Electron-Blocking Layer

Simkus, Gintautas, Sanders, Simon, StÃ¼mmler, Dominik, Vescan, Andrei, Kalisch, Holger, Heuken, Michael

Journal:

Year:

2020

File:

PDF, 1.18 MB

2020

26

On the thermal oxidation of AlInN/AlN/GaN heterostructures

Martin Eickelkamp, Martin Weingarten, Lars Rahimzadeh Khoshroo, Nico Ketteniss, Hannes Behmenburg, Michael Heuken, Holger Kalisch, Rolf H. Jansen, Andrei Vescan

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 226 KB

english, 2011

27

Charge balancing in GaN-based 2-D electron gas devices employing an additional 2-D hole gas and its influence on dynamic behaviour of GaN-based heterostructure field effect transistors

Hahn, Herwig, Reuters, Benjamin, Geipel, Sascha, Schauerte, Meike, Benkhelifa, Fouad, Ambacher, Oliver, Kalisch, Holger, Vescan, Andrei

Journal:

Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 1.39 MB

english, 2015

28

Fabrication of Methylammonium Bismuth Iodide Layers Employing Methylamine Vapor Exposure

Stümmler, Dominik, Sanders, Simon, Mühlenbruch, Sebastian, Pfeiffer, Pascal, Simkus, Gintautas, Heuken, Michael, Vescan, Andrei, Kalisch, Holger

Journal:

physica status solidi (a)

Year:

2019

Language:

english

File:

PDF, 976 KB

english, 2019

29

Controlling the interface charge density in GaN-based metal-oxide-semiconductor heterostructures by plasma oxidation of metal layers

Hahn, Herwig, Pécz, Béla, Kovács, András, Heuken, Michael, Kalisch, Holger, Vescan, Andrei

Journal:

Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 1.30 MB

english, 2015

30

Limitations for Reliable Operation at Elevated Temperatures of Al 2 O 3 /AlGaN/GaN MISHEMTs Grown by MOCVD on Silicon Substrate

Heuken, Lars, Ottaviani, Alessandro, Fahle, Dirk, Zweipfennig, Thorsten, Lükens, Gerrit, Kalisch, Holger, Vescan, Andrei, Heuken, Michael, Burghartz, Joachim N.

Journal:

physica status solidi (a)

Year:

2019

File:

PDF, 662 KB

2019

31

Effect of antimony on growth mode and properties of thick InGaN layers

Koch, Holger, Pietzonka, Ines, Galler, Bastian, Strassburg, Martin, Kalisch, Holger, Vescan, Andrei, Lugauer, Hans-Juergen

Journal:

Journal of Crystal Growth

Year:

2015

Language:

english

File:

PDF, 1.40 MB

english, 2015

32

Optimization of hybrid organic/inorganic poly(3-hexylthiophene-2,5-diyl)/silicon solar cells

Weingarten, Martin, Sanders, Simon, Stümmler, Dominik, Pfeiffer, Pascal, Vescan, Andrei, Kalisch, Holger

Journal:

Journal of Photonics for Energy

Year:

2016

Language:

english

File:

PDF, 624 KB

english, 2016

33

High-mobility GaN-on-Sapphire p-n diodes with near-unity ideality factor and large breakdown voltage

Kotzea, Simon, Debald, Arne, Heuken, Michael, Kalisch, Holger, Vescan, Andrei

Journal:

Journal of Physics D Applied Physics

Year:

2019

File:

PDF, 1.30 MB

2019

34

GaN-on-Si Enhancement Mode Metal Insulator Semiconductor Heterostructure Field Effect Transistor with On-Current of 1.35 A/mm

Hahn, Herwig, Benkhelifa, Fouad, Ambacher, Oliver, Alam, Assadullah, Heuken, Michael, Yacoub, Hady, Noculak, Achim, Kalisch, Holger, Vescan, Andrei

Journal:

Japanese Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 736 KB

english, 2013

35

Impact of AlN/Si Nucleation Layers Grown Either by NH 3 -MBE or MOCVD on the Properties of AlGaN/GaN HFETs

Yacoub, Hady, Zweipfennig, Thorsten, Kalisch, Holger, Vescan, Andrei, Dadgar, Armin, Wieneke, Matthias, Bläsing, Jürgen, Strittmatter, A., Rennesson, Stephanie, Semond, Fabrice

Journal:

physica status solidi (a)

Year:

2018

Language:

english

File:

PDF, 1012 KB

english, 2018

36

Growth and Characterization of Vertical and Lateral p-n Junctions Formed by Selective-Area p-GaN MOVPE on Patterned Templates

Debald, Arne, Kotzea, Simon, Heuken, Michael, Kalisch, Holger, Vescan, Andrei

Journal:

physica status solidi (a)

Year:

2018

Language:

english

File:

PDF, 4.18 MB

english, 2018

37

Reaction engineering of CVD methylammonium bismuth iodide layers for photovoltaic applications

Stümmler, Dominik, Sanders, Simon, Gerstenberger, Felix, Pfeiffer, Pascal, Simkus, Gintautas, Baumann, Peter K., Heuken, Michael, Vescan, Andrei, Kalisch, Holger

Journal:

Journal of Materials Research

Year:

2019

Language:

english

File:

PDF, 756 KB

english, 2019

38

AlN barrier HFETs with AlGaN channels to shift the threshold voltage to higher positive values: a proposal

Hahn, Herwig, Reuters, Ben, Kalisch, Holger, Vescan, Andrei

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 671 KB

english, 2013

39

First Small-Signal Data of GaN-Based p-Channel Heterostructure Field Effect Transistors

Hahn, Herwig, Reuters, Benjamin, Pooth, Alexander, Noculak, Achim, Kalisch, Holger, Vescan, Andrei

Journal:

Japanese Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 179 KB

english, 2013

40

Devices at High Temperatures-Status and Prospects

Kohn, Erhard, Ebert, Wolfgang, Vescan, Andrei

Journal:

Israel Journal of Chemistry

Year:

1998

Language:

english

File:

PDF, 784 KB

english, 1998

41

Advanced thin-film chip concepts for efficient InGaN solar cells

Koch, Holger, Niebling, Tobias, Pietzonka, Ines, Scholz, Dominik, Kalisch, Holger, Vescan, Andrei, Lugauer, Hans-Jürgen

Journal:

physica status solidi (a)

Year:

2015

Language:

english

File:

PDF, 350 KB

english, 2015

42

Effect of Carbon Doping Level on Static and Dynamic Properties of AlGaN/GaN Heterostructures Grown on Silicon

Yacoub, Hady, Zweipfennig, Thorsten, Lukens, Gerrit, Behmenburg, Hannes, Fahle, Dirk, Eickelkamp, Martin, Heuken, Michael, Kalisch, Holger, Vescan, Andrei

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 2.80 MB

english, 2018

43

GaN Micropillar Schottky Diodes with High Breakdown Voltage Fabricated by Selective‐Area Growth

Debald, Arne, Kotzea, Simon, Riedel, Jona, Heuken, Michael, Kalisch, Holger, Vescan, Andrei

Journal:

physica status solidi (a)

Year:

2019

File:

PDF, 3.07 MB

2019

44

Impact of gate dielectric thickness on the electrical properties of AlGaN/GaN MISHFETs on Si(111) substrate

Martin Eickelkamp, Dirk Fahle, Johannes Lindner, Michael Heuken, Christian Lautensack, Holger Kalisch, Rolf H. Jansen, Andrei Vescan

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 246 KB

english, 2010

45

Growth properties and electrochemical characterization of InGaN photoanodes with different In concentrations

Finken, Matthias, Wille, Ada, Reuters, Benjamin, Holländer, Bernd, Heuken, Michael, Kalisch, Holger, Vescan, Andrei

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 347 KB

english, 2014

46

Investigation of organic semiconductor interlayers in hybrid PEDOT:PSS/silicon solar cells

Weingarten, Martin, Zweipfennig, Thorsten, Sanders, Simon, Stümmler, Dominik, Pfeiffer, Pascal, Vescan, Andrei, Kalisch, Holger

Journal:

Journal of Photonics for Energy

Year:

2016

Language:

english

File:

PDF, 555 KB

english, 2016

47

Improved luminescence properties of MoS2 monolayers grown via MOCVD: Role of pre-treatment and growth parameters

Andrzejewski, Dominik, Marx, Matthias, Pfingsten, Oliver, Grundmann, Annika, Kalisch, Holger, Vescan, Andrei, Heuken, Michael, Kuemmell, Tilmar, Bacher, Gerd

Journal:

Year:

2018

Language:

english

File:

PDF, 1.22 MB

english, 2018

48

Processing approaches of AlGaN/GaN Metal Insulator Semiconductor Hetero Field Effect Transistors (MISHFET) on Si (111) substrates

Martin Eickelkamp, Nico Ketteniß, Christian Lautensack, Achim Noculak, Holger Kalisch, Rolf H. Jansen, Andrei Vescan

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 221 KB

english, 2009

49

Enhancement mode InAlGaN/GaN MISHFETs with plasma-oxidised AlO x /TiO x as gate insulator

Hahn, Herwig, Behmenburg, Hannes, Ketteniss, Nico, Heuken, Michael, Kalisch, Holger, Vescan, Andrei

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 310 KB

english, 2013

50

[IEEE 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2016.11.13-2016.11.16)] 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Pseudo-vertical GaN-based trench gate metal oxide semiconductor field effect transistor

Hentschel, Rico, Wachowiak, Andre, Groser, Andreas, Jahn, Andreas, Merkel, Ulrich, Wille, Ada, Kalisch, Holger, Vescan, Andrei, Schmult, Stefan, Mikolajick, Thomas

Year:

2016

File:

PDF, 511 KB

2016

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